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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B DESCRIPTION With TO-220 package Complement to type 2SA1006, 2SA1006A,2SA1006B APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO IN PARAMETER Collector-base voltage CHA E SEM NG 2SC2336 2SC2336A 2SC2336B 2SC2336 2SC2336A 2SC2336B Open emitter OND IC CONDITIONS TOR UC VALUE 180 200 250 180 UNIT V VCEO Collector-emitter voltage Open base 200 250 V VEBO IC ICM PT Emitter-base voltage Collector current Collector current-peak Open collector 5 1.5 3.0 V A A Ta=25ae Total power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 1.5 W 25 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency 2SC2336 2SC2336A 2SC2336B SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT CONDITIONS IC=0.5A; IB=50mA IC=0.5A ;IB=50mA VCB=150V; IE=0 VEB=3V; IC=0 IC=5mA ; VCE=5V IC=150mA ; VCE=5V IE=0 ; VCB=10V,f=1MHz IC=100mA ; VCE=10V MIN TYP. MAX 1.0 1.5 1 1 UNIT V V |I |I A A 30 60 30 320 pF MHz hFE-2 Classifications R Q P 160-320 60-120 CHA IN 100-200 E SEM NG OND IC TOR UC 95 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2336 2SC2336A 2SC2336B CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B CHA IN E SEM NG OND IC TOR UC 4 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B CHA IN E SEM NG OND IC TOR UC 5 |
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